Infineon IHW30N90R 900V 30A UltraFRFET™ Power MOSFET for High-Efficiency Switching Applications
The demand for high-efficiency and high-power-density solutions in modern power electronics continues to drive innovation in semiconductor technology. Addressing this need, Infineon Technologies introduces the IHW30N90R, a 900V, 30A UltraFRFET™ Power MOSFET engineered specifically for high-performance switching applications. This device combines high voltage capability with low switching losses, making it an ideal choice for power supplies, industrial motor drives, renewable energy systems, and other demanding environments.
A key highlight of the IHW30N90R is its superior switching performance, achieved through Infineon’s advanced UltraFRFET™ technology. The MOSFET features an integrated fast recovery body diode that significantly reduces reverse recovery charges (Qrr). This minimizes switching losses and helps achieve higher efficiency, particularly in hard-switching topologies such as power factor correction (PFC) circuits and full-bridge converters.
With a breakdown voltage of 900V, the IHW30N90R offers ample margin for operation in high-voltage environments, enhancing system reliability under voltage spikes or transient conditions. Its low on-resistance (RDS(on)) of just 90mΩ (max) ensures reduced conduction losses, leading to lower power dissipation and improved thermal performance. This allows designers to either maximize efficiency or reduce heatsinking requirements, supporting more compact and cost-effective designs.
The MOSFET is housed in a TO-247 package, which provides excellent thermal conductivity and mechanical robustness. This makes the device suitable for high-current applications and simplifies thermal management in end products. Additionally, the IHW30N90R is characterized by high dv/dt capability and a wide safe operating area (SOA), supporting stable and reliable operation across diverse load conditions.
Engineers seeking to optimize efficiency in high-voltage and high-frequency circuits will find the Infineon IHW30N90R an outstanding solution. Its blend of high voltage rating, low losses, and robust construction aligns perfectly with the requirements of next-generation power systems.
The Infineon IHW30N90R UltraFRFET™ MOSFET sets a high standard for efficiency and reliability in high-voltage power switching, making it a top choice for advanced industrial and energy applications.
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Keywords:
UltraFRFET™ Technology
High Voltage Switching
Fast Recovery Diode
Low Conduction Loss
900V Power MOSFET
