Infineon BSC011N03LSI G5: Advanced 30V OptiMOS Power MOSFET for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics drives continuous innovation in power semiconductor technology. At the forefront of this evolution is Infineon Technologies with its BSC011N03LSI G5, a benchmark 30V N-channel power MOSFET engineered to set new standards in performance for a wide array of demanding applications.

This MOSFET is a part of Infineon's esteemed OptiMOS™ 5 family, which is renowned for its exceptional balance of low switching losses and superior conduction performance. Fabricated with an advanced trench process, the BSC011N03LSI G5 boasts an extremely low typical on-state resistance (RDS(on)) of just 1.1 mΩ. This minimal resistance is pivotal in minimizing conduction losses, which directly translates into higher system efficiency, reduced heat generation, and the potential for more compact thermal management solutions.

A key strength of this device is its optimized switching characteristics. The low gate charge (Qg) and figure of merit (FOM) ensure rapid switching speeds, which are critical for high-frequency operation in switch-mode power supplies (SMPS), DC-DC converters, and motor control circuits. This allows designers to increase the switching frequency, thereby reducing the size of passive components like inductors and capacitors and ultimately leading to higher power density and lower overall system cost.

The BSC011N03LSI G5 is housed in an ultra-compact SuperSO8 package (PG-TDSON-8), which offers a significantly reduced footprint compared to standard packages. This makes it an ideal candidate for space-constrained applications such as server and telecom power supplies, high-end desktop VRMs (Voltage Regulator Modules), battery management systems (BMS), and synchronous rectification stages. The package is also designed for excellent thermal performance, effectively dissipating heat to maintain device reliability under high-stress conditions.

Furthermore, the 30V voltage rating provides a robust safety margin for standard 12V and 24V bus systems, enhancing system robustness and longevity. Its lead-free and RoHS-compliant construction also aligns with global environmental standards.

ICGOO

The Infineon BSC011N03LSI G5 is a superior power MOSFET that encapsulates the latest advancements in semiconductor design. Its combination of ultra-low RDS(on), fast switching capability, and a miniaturized package makes it a transformative component for engineers striving to achieve peak efficiency and maximum power density in next-generation electronic systems.

Keywords:

1. OptiMOS™ 5

2. Low RDS(on)

3. High-Efficiency

4. Power Density

5. SuperSO8 Package