IRLL2705TRPBF: A High-Performance 30V Single N-Channel HEXFET Power MOSFET

In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The IRLL2705TRPBF from Infineon Technologies stands as a testament to these principles, representing a significant advancement in MOSFET technology for low-voltage, high-switching-frequency applications. This single N-channel HEXFET Power MOSFET is engineered to deliver superior performance in a compact, surface-mount D-Pak (TO-252) package.

At its core, the IRLL2705TRPBF is designed for a maximum drain-to-source voltage (Vds) of 30V, making it an ideal choice for a wide array of secondary side power conversion tasks. These include DC-DC converters in computing and telecom systems, low-voltage motor control, power management in portable devices, and efficient synchronous rectification in switch-mode power supplies (SMPS). Its exceptionally low on-state resistance (Rds(on)) of just 6.5 mΩ at a 10V gate drive is a key feature, directly contributing to minimized conduction losses. This low Rds(on) ensures that the device remains cool and efficient even under substantial load currents, with a continuous drain current (Id) rating of 11A at room temperature.

The device is a product of Infineon's advanced HEXFET technology, which employs a hexagonal cell structure to achieve a very high cell density. This design innovation is crucial for achieving the low Rds(on) and, consequently, high efficiency. Furthermore, the IRLL2705TRPBF is characterized by its fast switching speed, which is essential for high-frequency operation. This allows designers to shrink the size of associated passive components like inductors and capacitors, leading to more compact and cost-effective end products.

Robustness is another critical aspect of this MOSFET. It is designed to withstand high surge currents and is avalanche rated, meaning it can handle unexpected voltage spikes that often occur in inductive load environments. The device is also fully characterized for repetitive avalanche events, providing engineers with greater confidence in the long-term reliability of their designs. The Pb-free and RoHS-compliant packaging meets modern environmental standards, facilitating its use in global markets.

ICGOOODFIND: The IRLL2705TRPBF is a highly optimized power MOSFET that excels in efficiency, thermal performance, and power density for low-voltage applications. Its combination of ultra-low Rds(on), fast switching, and proven ruggedness makes it a superior choice for designers aiming to maximize the performance and reliability of their power systems.

Keywords: HEXFET Technology, Low On-Resistance, Synchronous Rectification, Power Management, Fast Switching Speed.