Infineon IMBG65R048M1HXTMA1: 650V 48mΩ Si IGBT with HXTMA1 Package for High-Performance Power Conversion

In the realm of power electronics, achieving higher efficiency, power density, and reliability is a constant pursuit. The Infineon IMBG65R048M1HXTMA1 stands out as a pivotal solution, engineered to meet the rigorous demands of modern high-performance power conversion systems. This 650V, 48mΩ silicon IGBT in the advanced HXTMA1 package combines low losses with robust switching capabilities, making it an ideal choice for applications such as industrial motor drives, renewable energy inverters, uninterruptible power supplies (UPS), and EV charging infrastructure.

A key highlight of this IGBT is its ultra-low collector-emitter saturation voltage (VCE(sat)), which directly translates to reduced conduction losses. This characteristic is crucial for enhancing system efficiency, particularly in high-current operations. The device’s optimized trench gate field-stop technology ensures minimal switching losses, enabling higher switching frequencies without compromising thermal performance. This allows designers to shrink the size of magnetic components and heat sinks, thereby increasing overall power density.

The HXTMA1 package itself is a significant enabler of performance. It features a low-inductance design that mitigates voltage overshoot during switching, enhancing system reliability and electromagnetic compatibility (EMC). The package’s superior thermal properties, coupled with an efficient isolation rating, ensure effective heat dissipation and long-term stability even under stressful operating conditions.

Furthermore, the IMBG65R048M1HXTMA1 offers excellent short-circuit robustness, providing a critical safety margin in fault scenarios. Its co-packaged diode is optimized for reverse recovery, reducing losses in inductive load applications. This level of integration simplifies design-in efforts and boosts system reliability.

---

ICGOODFIND: The Infineon IMBG65R048M1HXTMA1 sets a high standard for silicon IGBTs, delivering an exceptional balance of low conduction/switching losses, high power density, and reliability. Its advanced HXTMA1 package addresses key challenges in modern power conversion, making it a top-tier component for demanding applications.

Keywords:

High-Efficiency Power Conversion, Low Conduction Loss, HXTMA1 Package, 650V IGBT, Thermal Performance