Infineon IMW65R039M1H: A 650V, 39mΩ High-Performance CoolMOS™ Power MOSFET

The relentless pursuit of higher efficiency, power density, and reliability in power electronics drives continuous innovation in semiconductor technology. At the forefront of this evolution is Infineon Technologies with its latest generation of CoolMOS™ products. The IMW65R039M1H stands as a prime example, representing a significant leap forward in high-voltage MOSFET performance for a wide array of demanding applications.

This device is engineered to address the core challenges faced by designers today. With a superlow typical on-state resistance (R DS(on)) of just 39mΩ at a breakdown voltage of 650V, it sets a new benchmark for minimizing conduction losses. This exceptional characteristic is a result of Infineon’s advanced superjunction (SJ) technology, which enables a drastically reduced silicon footprint compared to previous generations. The low R DS(on) directly translates into higher efficiency, particularly in power stages that operate with high continuous currents, such as in server power supplies, telecom rectifiers, and industrial motor drives.

Beyond its impressive static performance, the IMW65R039M1H excels in dynamic operation. It features exceptionally low gate charge (Q G) and outstanding switching characteristics, which are crucial for high-frequency operation. By minimizing switching losses, this MOSFET allows designers to push switching frequencies higher, enabling the use of smaller passive components like magnetics and capacitors. This is the key to achieving the coveted goal of increased power density, allowing for more compact and lighter end-products without compromising performance.

The device is also designed with robustness and ease of use in mind. It offers a avalanche ruggedness and high body diode dv/dt capability, ensuring reliable operation under harsh conditions and in circuits like power factor correction (PFC) where the body diode is actively used. Furthermore, its industry-standard TO-leadless (TOLL) package offers an excellent compromise between thermal performance and board space. The package features a large exposed top side for efficient heat sinking and a very low package parasitic inductance, which is vital for managing voltage spikes during fast switching transitions.

Typical applications harnessing the power of the IMW65R039M1H include:

High-end Switched-Mode Power Supplies (SMPS)

Server & Telecom Power Supplies

Solar Inverters and Energy Storage Systems

Industrial Motor Control and Drives

Electric Vehicle Charging Stations

ICGOOODFIND: The Infineon IMW65R039M1H is a pinnacle of high-voltage MOSFET design, masterfully balancing ultra-low conduction loss, superior switching performance, and robust reliability. It is an optimal choice for engineers aiming to maximize efficiency and power density in next-generation power conversion systems.

Keywords: CoolMOS™, 39mΩ R DS(on), 650V, High-Efficiency, Power Density